? semiconductor components industries, llc, 2012 may, 2012 ? rev. 1 1 publication order number: NTMFS4833NS/d NTMFS4833NS sensefet power mosfet 30 v, 156 a, single n ? channel, so ? 8 fl features ? accurate, lossless current sensing ? low r ds(on) to minimize conduction losses ? low capacitance to minimize driver losses ? optimized gate charge to minimize switching losses ? these devices are pb ? free, halogen free/bfr free and are rohs compliant applications ? cpu power delivery ? dc ? dc converters ? low side switching maximum ratings (t j = 25 c unless otherwise stated) parameter symbol value unit drain ? to ? source voltage v dss 30 v gate ? to ? source voltage v gs 20 v continuous drain current r ja (note 1) steady state t a = 25 c i d 26 a t a = 85 c 18 power dissipation r ja (note 1) t a = 25 c p d 2.31 w continuous drain current r ja (note 2) t a = 25 c i d 16 a t a = 85 c 11.6 power dissipation r ja (note 2) t a = 25 c p d 0.9 w continuous drain current r jc (note 1) t c = 25 c i d 156 a t c = 85 c 113 power dissipation r jc (note 1) t c = 25 c p d 86.2 w pulsed drain current t a = 25 c, t p = 10 s i dm 312 a operating junction and storage temperature t j , t stg ? 55 to +150 c source current (body diode) i s 86 a drain to source dv/dt dv/dt 6 v/ns single pulse drain ? to ? source avalanche energy (t j = 25 c, v dd = 30 v, v gs = 10 v, i l = 35 a pk , l = 1.0 mh, r g = 25 eas 612.5 mj lead temperature for soldering purposes (1/8? from case for 10 s) t l 260 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. surface ? mounted on fr4 board using 1 sq ? in pad, 1 oz cu. 2. surface ? mounted on fr4 board using the minimum recommended pad size. marking diagram http://onsemi.com a = assembly location y = year w = work week zz = lot traceability v (br)dss r ds(on) max i d max 30 v 2.2 m @ 10 v 156 a 3.4 m @ 4.5 v device package shipping ? ordering information NTMFS4833NSt1g so ? 8 fl (pb ? free) 1500 tape / reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. so ? 8 flat lead case 506bq 1 4833ns aywzz s s s g nc k1 d d sense source drain gate kelvin sense kelvin (do not connect) 127 a (do not connect) NTMFS4833NSt3g so ? 8 fl (pb ? free) 5000 tape / reel
NTMFS4833NS http://onsemi.com 2 thermal resistance maximum ratings parameter symbol value unit junction ? to ? case (drain) r jc 1.45 c/w junction ? to ? ambient ? steady state (note 3) r ja 54 junction ? to ? ambient ? steady state (note ) r ja 138.7 3. surface ? mounted on fr4 board using 1 sq ? in pad, 1 oz cu. 4. surface ? mounted on fr4 board using the minimum recommended pad size. electrical characteristics (t j = 25 c unless otherwise specified) parameter symbol test condition min typ max unit off characteristics drain ? to ? source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 30 v drain ? to ? source breakdown voltage temperature coefficient v (br)dss / t j 30 mv/ c zero gate voltage drain current i dss v gs = 0 v, v ds = 24 v t j = 25 c 1 a t j = 125 c 10 gate ? to ? source leakage current i gss v ds = 0 v, v gs = 20 v 100 na on characteristics (note 5) gate threshold voltage v gs(th) v gs = v ds , i d = 250 a 1.5 2.5 v negative threshold temperature coefficient v gs(th) /t j 6.8 mv/ c drain ? to ? source on resistance r ds(on) v gs = 10 v i d = 30 a 1.4 2.2 m i d = 15 a 1.3 v gs = 4.5 v i d = 30 a 2.3 3.4 i d = 15 a 2.3 forward transconductance g fs v ds = 15 v, i d = 15 a 100 s charges, capacitances & gate resistance input capacitance c iss v gs = 0 v, f = 1 mhz, v ds = 12 v 5250 pf output capacitance c oss 1080 reverse transfer capacitance c rss 500 total gate charge q g(tot) v gs = 4.5 v, v ds = 15 v; i d = 30 a 36 63 nc threshold gate charge q g(th) 3.8 gate ? to ? source charge q gs 15 gate ? to ? drain charge q gd 13 total gate charge q g(tot) v gs = 11.5 v, v ds = 15 v; i d = 30 a 86 nc switching characteristics (note 6) turn ? on delay time t d(on) v gs = 4.5 v, v ds = 15 v, i d = 15 a, r g = 3.0 21 ns rise time t r 60 turn ? off delay time t d(off) 37 fall time t f 44 5. pulse test: pulse width 300 s, duty cycle 2%. 6. switching characteristics are independent of operating junction temperatures. 7. with 0v potential from sense lead to source lead, i.e. using a virtual ground.
NTMFS4833NS http://onsemi.com 3 electrical characteristics (t j = 25 c unless otherwise specified) parameter unit max typ min test condition symbol switching characteristics (note 6) turn ? on delay time t d(on) v gs = 11.5 v, v ds = 15 v, i d = 15 a, r g = 3.0 11 ns rise time t r 34 turn ? off delay time t d(off) 53 fall time t f 34 drain ? source diode characteristics forward diode voltage v sd v gs = 0 v, i s = 30 a t j = 25 c 0.80 1.2 v t j = 125 c 0.67 reverse recovery time t rr v gs = 0 v, dis/dt = 100 a/ s, i s = 30 a 36 ns charge time t a 18 discharge time t b 18 reverse recovery charge q rr 32 nc package parasitic values source inductance l s t a = 25 c 0.65 nh drain inductance l d 0.005 nh gate inductance l g 1.84 nh gate resistance r g 1.4 current sense characteristics current sensing ratio i ratio v gs = 5 v, 0-70 c, 5-20 a 357 387 417 current sensing ratio i ratio v gs = 5 v, 0-70 c, 1 ? 5 a 351 387 423 current sense temperature coefficient (note 7) 0.006 %/ c mirror resistance rm(on) v gs = 5 v 0.80 5. pulse test: pulse width 300 s, duty cycle 2%. 6. switching characteristics are independent of operating junction temperatures. 7. with 0v potential from sense lead to source lead, i.e. using a virtual ground.
NTMFS4833NS http://onsemi.com 4 typical characteristic curves 4.0 v thru 6.0 v 2.8 v 3.2 v 3.0 v 60 0.003 0 20 1.20 1,000 100,000 02 1 v ds , drain ? to ? source voltage (volts) i d , drain current (amps) 0 v gs , gate ? to ? source voltage (volts) figure 1. on ? region characteristics figure 2. transfer characteristics i d , drain current (amps) 0 0.006 0 4 figure 3. on ? resistance vs. gate ? to ? source voltage v gs , gate ? to ? source voltage (volts) figure 4. on ? resistance vs. drain current and gate voltage i d , drain current (amps) r ds(on) , drain ? to ? source resistance ( ) r ds(on) , drain ? to ? source resistance ( ) figure 5. on ? resistance variation with temperature t j , junction temperature ( c) figure 6. drain ? to ? source leakage current vs. voltage v ds , drain ? to ? source voltage (volts) r ds(on) , drain ? to ? source resistance (normalized) i dss , leakage (na) ? 50 25 0 ? 25 50 75 2.5 3 15 10 30 0 3 v ds 10 v t j = 25 c t j = ? 55 c t j = 125 c v gs = 4.5 v 125 v gs = 0 v i d = 30 a v gs = 10 v t j = 150 c 50 0 4 4.5 t j = 25 c 20 1.80 100 4 1.5 610 0.001 3.4 v 3.6 v 3.8 v 60 20 200 25 200 i d = 30 a t j = 25 c 8 v gs = 10 v 100 t j = 25 c 0.002 0 5 75 2 10 12 0.004 25 80 100 120 160 180 100 175 0.002 0.004 0.008 30 50 40 1.60 0.80 t j = 125 c 150 0.016 125 150 10,000 5 0.60 1.00 1.40 40 140 3.5 0.010 0.012 0.014 2
NTMFS4833NS http://onsemi.com 5 typical characteristic curves t r t d(off) t d(on) t f v gs 01015 drain ? to ? source voltage (volts) c, capacitance (pf) figure 7. capacitance variation 6000 0 5 t j = 25 c c iss c oss c rss figure 8. gate ? to ? source and drain ? to ? source voltage vs. total charge 0 4 0 q g , total gate charge (nc) 2 8 40 i d = 30 a t j = 25 c q t 50 0 v sd , source ? to ? drain voltage (volts) i s , source current (amps) figure 9. resistive switching time variation vs. gate resistance r g , gate resistance ( ) 1 10 100 1000 t, time (ns) v gs = 0 v figure 10. diode forward voltage vs. current 100 0.5 0.6 5 10 15 1 v gs = 11.5 v v dd = 15 v i d = 15 a 0.7 0.9 20 30 25 t j = 25 c figure 11. maximum rated forward biased safe operating area 0.01 0.1 100 v ds , drain ? to ? source voltage (volts) 1000 i d , drain current (amps) r ds(on) limit thermal limit package limit 10 10 v gs = 20 v single pulse t c = 25 c 1 ms 100 s 10 ms dc 10 s 20 1 100 1000 25 5000 4000 3000 2000 0.4 1.0 v gs , gate ? to ? source voltage (volts) 6 20 10 30 90 70 60 12 v gs = 0 v 10 0.01 0.1 30 f = 1 mhz v ds , drain ? to ? source voltage (volts) 5 0 20 15 10 v ds q gs q gd 10 0.8 1 1 s 80
NTMFS4833NS http://onsemi.com 6 typical characteristic curves 0.1 0.00001 t, time (s) 100 10 0.1 0.01 0.0001 0.001 0.01 1.0 10 100 0.000001 50% (duty cycle) 20% 10% 5.0% 2.0% 1.0% single pulse 1000 r(t), effective transient thermal respons e figure 12. fet thermal response 1.0 r ja = 54 c/w
NTMFS4833NS http://onsemi.com 7 package dimensions dfn8 5x6, 1.27p case 506bq ? 01 issue c *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* 1.27 0.75 0.90 3.70 4.56 8x pitch 6.59 4.84 1.00 dimension: millimeters 2.00 4x 0.99 5.55 4x 0.92 4x m 3.25 h ??? 3.75 12 notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. dimension b applies to plated terminal and is measured between 0.15 and 0.30 mm from the terminal tip. 4. profile tolerance applies to the exposed pad as well as the terminal. 5. dimension d1 and e1 do not include mold flash, protrusions, or gate burrs. 6. seating plane is defined by the terminals. a1 is defined as the distance from the seating plane to the lowest point on the package body. 7. a visual indicator for pin 1 must be located in this area. 1234 5 6 top view side view bottom view d1 e1 h d e b a 0.20 c 0.20 c 2x 2x dim min millimeters a 0.90 a1 ??? b 0.33 c 0.20 d 5.15 bsc d1 4.50 d2 3.90 e 6.15 bsc e1 5.50 e2 3.00 e 1.27 bsc g 0.80 k 0.20 l 0.51 a 0.10 c 0.10 c 14 8 e 8x d2 g e2 b a 0.10 b c 0.05 c l detail a a1 c 4x 5 max 1.10 0.05 0.51 0.33 5.10 4.30 6.10 3.50 1.20 ??? 0.71 m n 1.80 2.20 7 8 n pin one identifier note 7 note 4 c seating plane detail a note 6 8x k note 3 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 NTMFS4833NS/d sensefet is a registered trademark of semiconductor components industries, llc (scillc). literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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